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MITSUBISHI SEMICONDUCTOR
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M63832GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
PIN CONFIGURATION
DESCRIPTION The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs.
IN1 IN2 IN3
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
O1 O2 O3 O4 O5 O6 O7 VCC OUTPUT
FEATURES G High breakdown voltage (BVCEO 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G "L" active level input G With input diode G Wide operating temperature range (Ta = -40 to +85C)
INPUT
IN4 IN5 IN6 IN7 GND
16P2S-A(GP) Package type 16P2Z-A(KP)
APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver.
CIRCUIT DIAGRAM
VCC
FUNCTION The M63832GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5k is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is activated, in such a case where one of the inputs of the 7 circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V.
20K INPUT 3.5K 1.05K 7.2K 3K GND OUTPUT
The seven circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = -40 ~ +85C)
Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board
Ratings 7 -0.5 ~ +50 500 -0.5 ~ VCC 0.80(FP)/0.78(KP) -40 ~ +85 -55 ~ +125
Unit V V mA V W C C Sep. 2001
MITSUBISHI SEMICONDUCTOR
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MIN RELI
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M63832GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol VCC Supply voltage
(Unless otherwise noted, Ta = -40 ~ +85C)
Parameter
Limits min 2.7 0 typ 3.0 -- max 3.6 400
Unit V
IC
Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously)
Duty Cycle GP/KP : no more than 2% Duty Cycle GP/KP : no more than 10%
mA 0 VCC-0.5 0 -- -- -- 200 VCC VCC-2.2 V V
VIH VIL
"H" input voltage "L" input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -40 ~ +85C)
Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Test conditions Limits min 50 -- -- -- -- 2000 typ -- 1.15 0.93 -220 2.6 10000 max -- 2.4 1.6 -600 4.0 -- Unit V V A mA --
Collector-emitter breakdown voltage ICEO = 100A VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25C
: Typical values are at Ta = 25C
SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25C)
Test conditions CL = 15pF (note 1)
Limits min -- -- typ 120 4500 max -- --
Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VCC Measured device PG 50 VO
TIMING DIAGRAM
INPUT 50% 50%
RL OUTPUT
OUTPUT 50% 50%
CL
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Sep. 2001
MITSUBISHI SEMICONDUCTOR
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MIN RELI
ARY
M63832GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 500
M63832GP M63832KP Vcc=2.7V VI=0.5V
Thermal Derating Factor Characteristics 1.0
Power dissipation Pd(max) (W)
0.78
Collector current Ic (mA)
0.8
400
0.6
0.416 0.406
300
0.4
200
Ta= 25C
0.2
100
Ta=85C
Ta= -20C
0
0
25
50
75 85
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C)
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics (M63832GP/KP) 500 500
Duty Cycle-Collector Characteristics (M63832GP/KP)
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneouslyoperated circuit. *Vcc = 3V *Ta = 85C
Collector current Ic (mA)
1
Collector current Ic (mA)
400
400
300
2
300
1
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C
200
2 3 4 5 76
100
3 4 5 6 7
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) DC Amplification Factor Collector Current Characteristics 10
DC amplification factor hFE
5
Duty cycle (%)
Output Current Characteristics 500
VCE=2V
7 5 3 2
VCE=2V Ta= 85C
Collector current IC (mA)
400
Ta= 85C
104
7 5 3 2 Ta= -40C Ta= 25C
300
Ta= 25C
10
3
200
Ta= -40C
7 5 3 2
100
102 1 10
2
3
5 7 102
2
3
5 7 103
0
0
0.4
0.8
1.2
1.6
2.0
Collector current IC (mA)
Input voltage Vcc-VI (V)
Sep. 2001
MITSUBISHI SEMICONDUCTOR
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
P
MIN RELI
ARY
M63832GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
Input Characteristics -0.6
VCC=3V
Driver Supply Characteristics 20.0
VI=0.5V
-0.4 -0.3
Ta=85C
Supply Current Icc (mA)
-0.5
16.0
Input Current II (mA)
12.0
Ta=25C Ta=-40C
8.0
-0.2
Ta=25C
-0.1
Ta=-40C
4.0
Ta=85C
0
0
1
2
3
0
0
2
4
6
8
10
Input voltage Vcc-VI (V)
Supply voltage Vcc (V)
Sep. 2001

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